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1

XPS study on valence band structures of transition-metal trisulfides, TiS3, NbS3, and TaS3

Kazuhiro Endo, Hideo Ihara, Kazuhiro Watanabe, Shun-Ichi Gonda

Journal:

Journal of Solid State Chemistry

Year:

1981

Language:

english

File:

PDF, 259 KB

english, 1981

2

Proton radiation effects in quantum dot lasers

Shun-ichi Gonda, Hiroyuki Tsutsumi, Ryoya Ishigami, Kyo Kume, Yoshifumi Ito, Mitsuru Ishida, Yasuhiko Arakawa

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 243 KB

english, 2008

3

As on InP

Emura, Shuichi, Gonda, Shun-ichi, Matsui, Yūichi, Hayashi, Hideki

Journal:

Physical Review B

Year:

1988

Language:

english

File:

PDF, 287 KB

english, 1988

4

superlattice

Emura, Shuichi, Soni, R. K., Gonda, Shun-ichi

Journal:

Physical Review B

Year:

1992

Language:

english

File:

PDF, 247 KB

english, 1992

5

Computer simulations of liquid phase epitaxy of III-V ternary alloys

Hachiro Ijuin, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1976

Language:

english

File:

PDF, 724 KB

english, 1976

6

Arsenic pressure dependence of composition x in AlxIn1−xAs grown by molecular beam epitaxy

Tsuyoshi Nakagawa, Shun-ichi Gonda, Shuichi Emura, Saburo Shimizu

Journal:

Journal of Crystal Growth

Year:

1988

Language:

english

File:

PDF, 319 KB

english, 1988

7

MOMBE (Metalorganic Molecular Beam Epitaxy) growth of InGaSb on GaSb

Tadaaki Kaneko, Hajime Asahi, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1989

Language:

english

File:

PDF, 406 KB

english, 1989

8

Observations on RHEED intensity oscillations during the growth of GaSb and InAs by MOMBE

Tadaaki Kaneko, Hajime Asahi, Yasutoshi Okuno, Tae Won Kang, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 720 KB

english, 1990

9

MOMBE (metalorganic molecular beam epitaxy) growth of InGaAlAsSb system on GaSb

Hajime Asahi, Tadaaki Kaneko, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 400 KB

english, 1991

10

Gas source MEE (migration enhanced epitaxy) growth of InP

Nobuyuki Takeyasu, Hajime Asahi, Soon Jae Yu, Kumiko Asami, Tadaaki Kaneko, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 392 KB

english, 1991

11

Atomically controlled InGaAs/InP superlattices grown by gas source MEE (migration enhanced epitaxy)

Hajime Asahi, Teruaki Kohara, Ravi Kant Soni, Kumiko Asami, Shuichi Emura, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1993

Language:

english

File:

PDF, 422 KB

english, 1993

12

Phonon behavior and interfacial stress in the strained (InAs)m/(GaAs)n ultrathin superlattices

Shuichi Emura, Yuichi Matsui, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1995

Language:

english

File:

PDF, 380 KB

english, 1995

13

Electroreflectance study of AlxGa1−x−yInyP alloy

Kumiko Asami, Hajime Asahi, Shun-ichi Gonda, Yuichi Kawamura, Hidenao Tanaka

Journal:

Solid State Communications

Year:

1989

Language:

english

File:

PDF, 221 KB

english, 1989

14

Band offsets at pseudo-ternary semiconductor-alloy heterojunctions

Masao Nakao, Shun-ichi Gonda

Journal:

Surface Science Letters

Year:

1986

Language:

english

File:

PDF, 49 KB

english, 1986

15

Gas source MEE growth of InGaAs/InP superlattices

Hajime Asahi, Teruaki Kohara, Ravi Kant Soni, Nobuyuki Takeyasu, Kumiko Asami, Shuichi Emura, Shun-ichi Gonda

Journal:

Applied Surface Science

Year:

1992

Language:

english

File:

PDF, 262 KB

english, 1992

16

Optical properties of atomically controlled InGaAs/InP quantum well structures

Hajime Asahi, Hachiro Ijuin, Teruaki Kohara, Kumiko Asami, Hiromichi Watanabe, Shun-ichi Gonda

Journal:

Applied Surface Science

Year:

1994

Language:

english

File:

PDF, 349 KB

english, 1994

17

Modeling of band discontinuity by modified Harrison model

Shun-ichi Gonda, Kumiko Asami

Journal:

Superlattices and Microstructures

Year:

1987

Language:

english

File:

PDF, 308 KB

english, 1987

18

Proton radiation effects in nitride lasers and light emitting diodes

Shun-ichi Gonda, Hiroyuki Tsutsumi, Yoshiumi Ito, Takashi Mukai, Shin-ichi Nagahama

Journal:

physica status solidi (a)

Year:

2007

Language:

english

File:

PDF, 268 KB

english, 2007

19

Very low resistance ohmic contacts to n-GaN

Hwe Jae Lee, Soon Jae Yu, Hajime Asahi, Shun-Ichi Gonda, Young Hwan Kim, Jin Koo Rhee, S. J. Noh

Journal:

Journal of Electronic Materials

Year:

1998

Language:

english

File:

PDF, 390 KB

english, 1998

20

Nitrogen doping into GaAs1−xPx using ionized beam in molecular beam epitaxy

Yuichi Matsushima, Shun-ichi Gonda, Yunosuke Makita, Seiji Mukai

Journal:

Journal of Crystal Growth

Year:

1978

Language:

english

File:

PDF, 477 KB

english, 1978

21

Surface diffusion lengths of Ga molecules during GaAs MOMBE (metalorganic molecular beam epitaxy) growth

Yasutoshi Okuno, Hajime Asahi, Tadaaki Kaneko, Tae Won Kang, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1990

Language:

english

File:

PDF, 471 KB

english, 1990

22

MOMBE growth of GaSb and InAsSb using triethylstibine and triethylarsine

Tadaaki Kaneko, Hajime Asahi, Yasushi Itani, Yasutoshi Okuno, Shun-ichi Gonda

Journal:

Journal of Crystal Growth

Year:

1991

Language:

english

File:

PDF, 442 KB

english, 1991

23

XPS study of one-dimensional compounds: TiS3

Kazuhiro Endo, Hideo Ihara, Kazuhiro Watanabe, Shun-Ichi Gonda

Journal:

Journal of Solid State Chemistry

Year:

1982

Language:

english

File:

PDF, 364 KB

english, 1982

24

Modeling of band discontinuity using modified Harrison model

Shun-ichi Gonda

Journal:

Solid State Communications

Year:

1986

Language:

english

File:

PDF, 223 KB

english, 1986

25

High density of self-organized quantum dots formed in (GaP)n(InP)m short period superlattices grown on GaAs (N11)

Seong-Jin Kim, Hajime Asahi, Minori Takemoto, Joo-Hyong Noh, Kumiko Asami, Shun-ichi Gonda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 456 KB

english, 1997

26

Radiation hardness of single-crystalline zinc oxide films

Kazuto Koike, Takahiro Aoki, Ryugo Fujimoto, Shigehiko Sasa, Mitsuaki Yano, Shun-ichi Gonda, Ryoya Ishigami, Kyo Kume

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 350 KB

english, 2012

27

Thermal stability of Si/Gen/Si heterostructures by photoreflectance

Kumiko Asami, Kazushi Miki, Kunihiro Sakamoto, Tsunenori Sakamoto, Shun-Ichi Gonda

Journal:

Journal of Electronic Materials

Year:

1992

Language:

english

File:

PDF, 410 KB

english, 1992

28

Band offsets at pseudo-ternary semiconductor-alloy heterojunctions

Masao Nakao, Shun-ichi Gonda

Journal:

Surface Science

Year:

1986

Language:

english

File:

PDF, 292 KB

english, 1986

29

[IEEE 2011 International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Suita, Osaka, Japan (2011.05.19-2011.05.20)] 2011 International Meeting for Future of Electron Devices - Irradiation effect of 8 MeV protons on single-crystalline zinc oxide

Aoki, Takahiro, Fujimoto, Ryugo, Koike, Kazuto, Sasa, Shigehiko, Yano, Mitsuaki, Gonda, Shun-ichi, Ishigami, Ryoya, Kume, Kyo

Year:

2011

Language:

english

File:

PDF, 181 KB

english, 2011

30

[IEEE 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Matsue, Japan (2007.05.14-2007.05.18)] 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials - Proton Radiation Effects in High-Power GaInP/AlGaInP Semiconductor Lasers

Gonda, Shun-ichi, Tsutsumi, Hiroyuki, Ito, Yoshifumi, Kume, Kyo, Ishigami, Ryoya, Makino, Takamitsu, Morita, Takenori, Kan, Hirofumi

Year:

2007

Language:

english

File:

PDF, 3.81 MB

english, 2007

31

[IEEE Related Materials (IPRM) - Versailles, France (2008.05.25-2008.05.29)] 2008 20th International Conference on Indium Phosphide and Related Materials - Radiation hardnessin InGaAsP lasers

Gonda, Shun-ichi

Year:

2008

Language:

english

File:

PDF, 281 KB

english, 2008

32

New III-V Compound Semiconductors TlInGaP for $\bf 0.9\,{\mbi \mu}m$ to over $\bf 10\,{\mbi \mu}m$ Wavelength Range Laser Diodes and Their First Successful Growth

Asahi, Hajime, Yamamoto, Kazuhiko, Iwata, Kakuya, Gonda, Shun-ichi, Oe, Kunishige

Journal:

Japanese Journal of Applied Physics

Year:

1996

File:

PDF, 876 KB

1996

33

Laser oscillation involving nitrogen isoelectronic impurities in indirect-gap AlxGa1−xAs (x=0.46, 2 °K)

Gonda, Shun-ichi, Makita, Yunosuke, Ijuin, Hachiro

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 390 KB

english, 1976

34

Infrared study of amorphous B1−xCx films

Shirai, Koun, Emura, Shuichi, Gonda, Shun-ichi, Kumashiro, Yukinobu

Journal:

Journal of Applied Physics

Year:

1995

Language:

english

File:

PDF, 1.36 MB

english, 1995

35

Photoluminescence excitation spectra of nitrogen-implanted AlxGa1−xAs

Makita, Yunosuke, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1977

Language:

english

File:

PDF, 477 KB

english, 1977

36

Preparation and structure of carbon film deposited by a mass-separated C+ ion beam

Miyazawa, Takeo, Misawa, Shunji, Yoshida, Sadafumi, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1984

Language:

english

File:

PDF, 648 KB

english, 1984

37

-Type Germanium

Mikoshiba, Nobuo, Gonda, Shun-ichi

Journal:

Physical Review (Series I)

Year:

1962

Language:

english

File:

PDF, 1.44 MB

english, 1962

38

Doping and electrical properties of Mg in LPE AlxGa1−xAs

Mukai, Seiji, Makita, Yunosuke, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1979

Language:

english

File:

PDF, 548 KB

english, 1979

39

Gas source molecular beam epitaxy growth of short period GaP/AlP(001) superlattices

Asahi, Hajime, Asami, Kumiko, Watanabe, Tetsuya, Yu, Soon Jae, Kaneko, Tadaaki, Emura, Shuichi, Gonda, Shun-ichi

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 575 KB

english, 1991

40

Raman scattering study of thermal interdiffusion in InGaAs/InP superlattice structures

Yu, Soon Jae, Asahi, Hajime, Emura, Shuichi, Gonda, Shun-ichi, Nakashima, Kiichi

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 773 KB

english, 1991

41

Study of Ga ion implantation damage and annealing effect in Sn-doped InP using Raman scattering

Yu, Soon Jae, Asahi, Hajime, Emura, Shuichi, Sumida, Hitoshi, Gonda, Shun-ichi, Tanoue, Hisao

Journal:

Journal of Applied Physics

Year:

1989

Language:

english

File:

PDF, 736 KB

english, 1989

42

Gas source molecular beam epitaxy/migration enhanced epitaxy growth of InAs/AlSb superlattices

Seta, Masumichi, Asahi, Hajime, Kim, Song Gang, Asami, Kumiko, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1993

Language:

english

File:

PDF, 823 KB

english, 1993

43

Photoluminescence of boron-implanted AlxGa1−xAs (x=0.37)

Makita, Yunosuke, Gonda, Shun-ichi

Journal:

Applied Physics Letters

Year:

1975

Language:

english

File:

PDF, 406 KB

english, 1975

44

Effect of substrate temperature on composition ratio x in molecular-beam-epitaxial GaAs1−xPx

Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1976

Language:

english

File:

PDF, 407 KB

english, 1976

45

Raman spectra of the pentanary alloy semiconductor (AlxGa1−x)1−zInzPyAs1−y

Emura, Shuichi, Gonda, Shun-ichi, Mukai, Seiji

Journal:

Journal of Applied Physics

Year:

1988

Language:

english

File:

PDF, 613 KB

english, 1988

46

Raman spectra of AlxIn1−xAs grown by molecular-beam epitaxy

Emura, Shuichi, Nakagawa, Tsuyoshi, Gonda, Shun-ichi, Shimizu, Saburo

Journal:

Journal of Applied Physics

Year:

1987

Language:

english

File:

PDF, 491 KB

english, 1987

47

Enhancement of emission intensity in indirect-gap AlxGa1−xAs (x=0.53) by nitrogen-ion implantation

Makita, Yunosuke, Gonda, Shun-ichi, Ijuin, Hachiro, Tsurushima, Toshio, Tanoue, Hisao, Maekawa, Shigeru

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 421 KB

english, 1976

48

Very-low-pressure deposition by electron cyclotron resonance plasma chemical vapor deposition method

Shirai, Koun, Gonda, Shun-ichi

Journal:

Journal of Applied Physics

Year:

1990

Language:

english

File:

PDF, 859 KB

english, 1990

49

Composition-ratio dependence of formation of bound states in nitrogen-implanted AlxGa1−xAs

Makita, Yunosuke, Ijuin, Hachiro, Gonda, Shun-ichi

Journal:

Applied Physics Letters

Year:

1976

Language:

english

File:

PDF, 408 KB

english, 1976

50

A new luminescence line due to nitrogen implanted into AlxGa1−xAs (x=0.37)

Gonda, Shun-ichi, Makita, Yunosuke

Journal:

Applied Physics Letters

Year:

1975

Language:

english

File:

PDF, 382 KB

english, 1975

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